2014. 3. 31 1/2 semiconductor technical data kdr728e schottky barrier type diode revision no : 3 low voltage high speed switching. features h low forward voltage : v f(2) =0.42(typ.) h small package : esc. maximum rating (ta=25 ? ) 1. anode 2. cathode esc dim millimeters a b c d e 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 cathode mark d c b a 1 2 e f 0.13 0.05 f g + _ + _ + _ + _ + _ + _ 0.20 0.10 + _ gg * : mounted on a glass epoxy circuit board of 20 ? 20mm, pad dimension of 4 ? 4mm. electrical characteristics (ta=25 ? ) type name marking t u characteristic symbol rating unit maximum (peak) reverse voltage v rm 30 v reverse voltage v r 30 v maximum (peak) forward current i fm 150 ma average forward current i o 30 ma surge current (10ms) i fsm 200 ma power dissipation p d 150 * mw junction temperature t j 125 ? storage temperature range t stg -55 q 125 ? characteristic symbol test condition min. typ. max. unit forward voltage v f(1) i f =1ma - 0.3 0.4 v v f(2) i f =30ma - 0.42 0.55 reverse current i r v r =30v - - 300 a total capacitance c t v r =1v, f=1mhz - 6.5 - pf
2014. 3. 31 2/2 kdr728e revision no : 3 reverse voltage v (v) r c - v t terminal capacitance c (pf) tr i - v ff f forward voltage v (v) 0 f forward current i (ma) 0.1 ta=25 c 0.2 0.3 0.5 0.4 10 2 10 -4 10 -3 10 -2 10 -1 10 -2 10 -1 1 10 i - v r reverse voltage v (v) r reverse current i ( a) rr 05 ta=25 c 10 20 15 30 25 10 1 05 1 10 2 10 10 15 20 25 30 f=1mhz ta=25 c
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